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BDW93C

Part Number	BDW93C
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 7, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDW93C DESCRIPTION ·With TO-220 packaging ·Very hi...
Datasheet	BDW93C PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDW93C DESCRIPTION ·With TO-220 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to Type BDW94C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation Max.
Junction Temperature 100 V 100 V 5 V 12 A 15 A 0.
2 A 80 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
56 ℃/W isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark INC...

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