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BU508DR

Part Number	BU508DR
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 7, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·B...
Datasheet	BU508DR PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8.
0 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 4 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 6 A 1...

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