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BU941ZP

Part Number	BU941ZP
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature ·...
Datasheet	BU941ZP PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in automotive environment as electronic ignition power actuators.
ABSOLUTE MAXIMUM RATINGS(TBaB=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 350 V VB EBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM Base Current-Peak PC Collector Power Dissipation @ TB CB =25℃ T JB B Junction Temperature 5 A 155 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT RB th j-cB Thermal Resistance, Junction to Case 0.
97 ℃/W BU941ZP isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TB CB=25℃ unless othe...

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