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BU941P

INCHANGE
Part Number BU941P
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 24, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device performance...
Datasheet PDF File BU941P PDF File

BU941P
BU941P

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (TBaB=25℃) SYMBOL PARAMETER VALUE UNIT V CBO B B Collector-Base Voltage 500 V V CEO B B Collector-Emitter Voltage 400 V V EBO B B Emitter-Base Voltage 5 V I CB B Collector Current- Continuous 15 A I CM B B Collector Current-Peak 30 A I BB B Base Current 1 A I BM B B Base Current-Peak P CB B Collector Power Dissipation @TB CB =25℃ T jB B Junction Temperature 5 A 155 W 150 ℃ T stg B B Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT RB th j-cB Thermal Resistance, Junction to Case 0.
97 ℃/W BU941P isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU941P ELECTRICAL CHARACTERISTICS TB CB=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VB CEO(SUS)B Collector-Emitter Voltage Sustaining IB CB =50mA; I = BB B 0 VB CE(sat)-1B Collector-Emitter Voltage Saturation I = CB B 8 A; I = BB B 100mA VB CE(sat)-2B Collector-Emitter Voltage Saturation I = CB B 10 A; I = BB B 250mA VB CE(sat)-3B Collector-Emitter Voltage Saturation I = CB B 12 A; I = BB B 300mA VB BE(sat)-1B Base-Emitter Saturation Voltage I = CB B 8 A; I = BB B 100mA MIN TYP MAX UNIT 400 V 1.
6 V 1.
8 V 2.
0 V 2.
2 V VB BE(sat)-2B Base-Emitter Saturation Voltage I = CB B 10 A; I = BB B 250mA 2.
5 V VB BE(sat)-3B Base-Emitter Saturation Voltage I CES B B Collector Cutoff Current I CEO B B I EBO B B Collector Cutoff Current Emitter Cutoff Current I = CB B 12 A; I = BB B 300mA V = CE B B 500V;VB BEB = 0 V = CE B B 500V;VB BEB = 125℃ 0;TB jB = V = CE B B 450V; I = BB B 0 V = CE B B 450V; I = BB B 0;TB jB = 125℃...


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