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BUH1215

INCHANGE
Part Number BUH1215
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 8, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Speed...
Datasheet PDF File BUH1215 PDF File

BUH1215
BUH1215

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.
) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits in televisions and monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Base Voltage VBE= 0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 16 A ICM Collector Current-Peak 22 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 9 A 200 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.
63 ℃/W BUH1215 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless o...


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