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BUL6825

INCHANGE
Part Number BUL6825
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 8, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collec...
Datasheet PDF File BUL6825 PDF File

BUL6825
BUL6825

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.
) ·Low Collector Saturation Voltage : VCE(sat) = 0.
5V(Max) @ IC= 1A ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in relay drivers ,inverters ,switching regulators and deflection circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 4 A ICM Collector Current-peak 8 A IB Base Current-Continuous 2 A IBM Base Current-peak PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
67 ℃/W BUL6825 isc website：...


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