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D45H8

Part Number	D45H8
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage ·Fast Switching Speeds ·Minimum...
Datasheet	D45H8 PDF File

Overview

isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage ·Fast Switching Speeds ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general pourpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range -2...

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