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DK151F

INCHANGE
Part Number DK151F
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 8, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation vo...
Datasheet PDF File DK151F PDF File

DK151F
DK151F

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 20 A ICM Peak Collector Current 40 A PC Collector Power Dissipation 150 W TJ Junction Temperature -65~150 ℃ Tstg Storage Tem...


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