DatasheetsPDF.com

KSD1588

INCHANGE
Part Number KSD1588
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 9, 2020
Detailed Description isc Silicon NPN Power Transistor KSD1588 DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Vo...
Datasheet PDF File KSD1588 PDF File

KSD1588
KSD1588

Overview
isc Silicon NPN Power Transistor KSD1588 DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Complement to Type KSB1097 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.
5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collec...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)