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KTA968A

INCHANGE
Part Number KTA968A
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 9, 2020
Detailed Description isc Silicon PNP Power Transistor KTA968A DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -180V(Min) ·Good...
Datasheet PDF File KTA968A PDF File

KTA968A
KTA968A

Overview
isc Silicon PNP Power Transistor KTA968A DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type KTC2238A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.
5 A 25 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS -55~150 ℃ SYMBOL PARAMETER Rth j-a Thermal Resistance, Junction to Ambient MAX 63 UNIT ℃/W THERMAL CHARACTERISTICS isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor KTA968A ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise speci...


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