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SDT7B04

INCHANGE
Part Number SDT7B04
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 9, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor SDT7B04 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(...
Datasheet PDF File SDT7B04 PDF File

SDT7B04
SDT7B04

Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor SDT7B04 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.
) ·DC Current Gain- : hFE= 20~250(Min.
)@IC= 2.
5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output,regulated power supply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 175 ℃ Tstg Storage Temp...


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