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MBR10L100CT

INCHANGE
Part Number MBR10L100CT
Manufacturer INCHANGE
Description Schottky Barrier Rectifier
Published Sep 11, 2020
Detailed Description Schottky Barrier Rectifier INCHANGE Semiconductor MBR10L100CT FEATURES ·Metal silicon junction, majority carrier condu...
Datasheet PDF File MBR10L100CT PDF File

MBR10L100CT
MBR10L100CT

Overview
Schottky Barrier Rectifier INCHANGE Semiconductor MBR10L100CT FEATURES ·Metal silicon junction, majority carrier conduction ·Low leakage current, low power loss, high efficiency ·Dual rectifier construction, positive center tap ·Guardring for overvoltage protection ·High surge current capability ·Guard-ring for overvoltage protection ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supply ·Converters ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current VALUE UNIT 100 70 V 100 10 A IFRM Peak Repetitive Forward Current 10 A Nonrepetitive Peak Surge Current IFSM (8.
3 ms Single Half Sinewave Superimposed 120 A on Rated Load) TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc ...


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