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MBRD10100CT

Part Number	MBRD10100CT
Manufacturer	INCHANGE
Description	Schottky Barrier Rectifier
Published	Sep 14, 2020
Detailed Description	Schottky Barrier Rectifier INCHANGE Semiconductor MBRD10100CT FEATURES ·With TO-251(DPKE) package ·Schottky Barrier Ch...
Datasheet	MBRD10100CT PDF File

Overview

Schottky Barrier Rectifier INCHANGE Semiconductor MBRD10100CT FEATURES ·With TO-251(DPKE) package ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss,High Efficiency ·High Surge Capability ·High Current Capability and Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency switching ·High efficiency SMPS ·Automotive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 100℃ Non-repetitive Peak Surge Current 8.
3ms half sine wave TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT 100 V 10 A 120 A 125 ℃ -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBRD10100CT THERMAL CHARACTERISTICS SYMBOL PARAMET...

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