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STPS40M60CT

STMicroelectronics
Part Number STPS40M60CT
Manufacturer STMicroelectronics
Description power Schottky rectifier
Published Sep 14, 2020
Detailed Description STPS40M60C High efficiency 60 V power Schottky rectifier Features ■ High current capability ■ Avalanche rated ■ Low for...
Datasheet PDF File STPS40M60CT PDF File

STPS40M60CT
STPS40M60CT

Overview
STPS40M60C High efficiency 60 V power Schottky rectifier Features ■ High current capability ■ Avalanche rated ■ Low forward voltage drop ■ Low leakage current ■ High frequency operation Description This dual diode Schottky rectifier is suited for high frequency switch mode power supply.
Packaged in TO-220AB, I2PAK and D2PAK, this device is particularly suited for use in notebook, game station and desktop adapters, providing these applications with a good efficiency at both low and high load.
Table 1.
Device summary Symbol IF(AV) VRRM Tj (max) VF (typ) Value 2 x 20 A 60 V 150 °C 385 mV A1 A2 K A2 K A1 I2PAK STPS40M60CR K K K A2 A1 D2PAK STPS40M60CG-TR A2 K A1 TO-220AB STPS40M60CT Figure 1.
Electrical characteristics(a) V I "Forward" I 2 x IO X VRRM VAR VR IF IO IR X V "Reverse" VTo VF(Io) VF VF(2xIo) IAR May 2011 a.
VARM and IARM must respect the reverse safe operating area defined in Figure 13.
VAR and IAR are pulse measurements (tp < 1 µs).
VR, IR, VRRM and VF, are static characteristics Doc ID 018813 Rev 1 1/10 www.
st.
com 10 Characteristics 1 Characteristics STPS40M60C Table 2.
Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current, δ = 0.
5 Tc = 130 °C Per diode 20 A Tc = 120 °C Per device 40 IFSM Surge non repetitive forward current PARM(1) Repetitive peak avalanche power tp = 10 ms sinusoidal Tj = 25 °C, tp = 1 µs 220 A 23000 W VARM(2) Maximum repetitive peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 86.
3 A 80 V Tstg Storage temperature range Tj Maximum operating junction temperature(3) -65 to +175 °C 150 °C 1.
For temperature or pulse time duration deratings, please refer to figure 3 and 4.
More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 ...


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