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TSSD10L200SW

INCHANGE
Part Number TSSD10L200SW
Manufacturer INCHANGE
Description Schottky Barrier Rectifier
Published Sep 14, 2020
Detailed Description Schottky Barrier Rectifier INCHANGE Semiconductor TSSD10L200SW FEATURES ·Low Forward Voltage ·High Frequency ·Extremel...
Datasheet PDF File TSSD10L200SW PDF File

TSSD10L200SW
TSSD10L200SW

Overview
Schottky Barrier Rectifier INCHANGE Semiconductor TSSD10L200SW FEATURES ·Low Forward Voltage ·High Frequency ·Extremely low reverse leakage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching mode power supplies ·Lighting application ·DC/DC Converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage DC Blocking Voltage 200 V IF(AV) IFSM TJ Average Rectified Forward Current 10 A Non-repetitive Peak Surge Current (8.
3ms single half sine-wave superimposed 200 A on rated load per diode) Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc websit...


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