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C122B1

Part Number	C122B1
Manufacturer	INCHANGE
Description	Thyristors
Published	Sep 14, 2020
Detailed Description	isc Thyristors INCHANGE Semiconductor C122B1 DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ...
Datasheet	C122B1 PDF File

Overview

isc Thyristors INCHANGE Semiconductor C122B1 DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave;60HZ;Tc=75℃ ) PG(AV) Average gate power dissipation Tp=8.
3ms;Tc=70℃ Tj Operating junct...

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