DatasheetsPDF.com

TXN625RG

STMicroelectronics
Part Number TXN625RG
Manufacturer STMicroelectronics
Description Standard 25A SCR
Published Sep 15, 2020
Detailed Description TN2540, TXN625, TYN625, TYN825, TYN1225 Standard 25 A SCRs A G K A A G A K G K AG D²PAK TO-220AB K AG TO-220AB ...
Datasheet PDF File TXN625RG PDF File

TXN625RG
TXN625RG



Overview
TN2540, TXN625, TYN625, TYN825, TYN1225 Standard 25 A SCRs A G K A A G A K G K AG D²PAK TO-220AB K AG TO-220AB Insulated Datasheet - production data Features • On-state rms current, IT(RMS) 25 A • Repetitive peak off-state voltage, VDRM/VRRM 600 to 1200 V • Triggering gate current, IGT 40 mA • Insulated package TO-220AB ins – Insulating voltage 2500 V rms – UL1557 certified (file ref.
E81734) Description These standard 25 A SCRs are suitable for general purpose applications.
Using clip assembly technology, they provide a superior performance in surge current capabilities.
TXN625RG is packaged in TO-220AB ins.
Order code TN2540-600G-TR TN2540-800G-TR TXN625RG TYN625RG TYN825RG TYN1225RG Table 1.
Device summary Voltage VDRM/VRRM 600 V 800 V 1200 V Y Y Y Y Y Y Sensitivity IGT 40 mA 40 mA 40 mA 40 mA 40 mA 40 mA Package D2PAK D2PAK TO-220AB ins TO-220AB TO-220AB TO-220AB August 2014 This is information on a product in full production.
DocID7478 Rev 9 1/11 www.
st.
com Characteristics 1 Characteristics TN2540, TXN625, TYN625, TYN825, TYN1225 Symbol Table 2.
Absolute ratings (limiting values) Parameter IT(RMS) IT(AV) ITSM I2t dI/dt IGM PG(AV) Tstg Tj VRGM TO-220AB, On-state rms current (180 °Conduction angle) D2PAK Tc = 100 °C TO-220AB ins Tc = 83 °C Average on-state current (180 °Conduction angle) Tc = 100 °C Non repetitive surge peak on-state current I2t Value for fusing tp = 8.
3 ms tp = 10 ms tp = 10 ms Tj = 25 °C Tj = 25 °C Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 60 Hz Tj = 125 °C Peak gate current tp = 20 µs Tj = 125 °C Average gate power dissipation Tj = 125 °C Storage junction temperature range Operating junction temperature range Maximum peak reverse gate voltage Value 25 16 314 300 450 50 4 1 - 40 to + 150 - 40 to + 125 5 Unit A A A A2S A/µs A W °C V Symbol Table 3.
Electrical Characteristics (Tj = 25 °C, unless otherwise specified) Test conditions Value IGT VGT VGD IH IL dV/dt V...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)