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BT136-800E

INCHANGE
Part Number BT136-800E
Manufacturer INCHANGE
Description Thyristor
Published Sep 15, 2020
Detailed Description isc Thyristors INCHANGE Semiconductor BT136-800E DESCRIPTION ·With TO-220 packaging ·Operating in 4 quadrants ·High co...
Datasheet PDF File BT136-800E PDF File

BT136-800E
BT136-800E

Overview
isc Thyristors INCHANGE Semiconductor BT136-800E DESCRIPTION ·With TO-220 packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current 50HZ 60HZ 4 A 25 27 A PG(AV) Average gate power dissipation ( over any 20 ms period ) 0.
5 W Tj Operating junction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ isc website：www.
iscsemi.
com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BT136-800E ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current ID...


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