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BT137-800E

HAOPIN
Part Number BT137-800E
Manufacturer HAOPIN
Description Sensitive Gate Triac
Published Sep 15, 2020
Detailed Description TM BT137-800E HPM Sensitive Gate Triacs HAOPIN MICROELECTRONICS CO.,LTD. Description Passivated, sensitive gate tri...
Datasheet PDF File BT137-800E PDF File

BT137-800E
BT137-800E

Overview
TM BT137-800E HPM Sensitive Gate Triacs HAOPIN MICROELECTRONICS CO.
,LTD.
Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.
Symbol T2 T1 Simplified outline Pin 1 2 3 TAB G 1 2 3 TO-220 Description Main terminal 1 (T1) Main terminal 2 (T2) gate (G) Main terminal 2 (T2) SYMBOL VDRM IT RMS ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current Applications: Motor control Industrial and domestic lighting Heating Static switching Features Blocking voltage to 800 V On-state RMS current to 8 A Value 800 8 65 Unit V A A SYMBOL PARAMETER Rth j-mb Thermal resistance Junction to mounting base CONDITIONS Full cycle Half cycle MIN - TYP - Rth j-a Thermal resistance Junction to ambient In free air - 60 MAX 2.
0 2.
4 UNIT K/W K/W - K/W http://www.
haopin.
com 1/5 TM BT137-800E HPM Sensitive Gate Triacs HAOPIN MICROELECTRONICS CO.
,LTD.
Limiting values in accordance with the Maximum system(IEC 134) SYMBOL PARAMETER VDRM Repetitive peak off-state Voltages IT(RMS) RMS on-state current ITSM Non-repetitive surge peak on-statecurrent I2t I2t for fusing dIT/dt Repetitive rate of rise of on-state current after triggering IGM VGM PGM P G(AV ) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction Temperature CONDITIONS Full sine wave;Tmb 102 full sine wave;, Tj =25 prior to surge T=10ms I = TM 12A; IG=0.
2A; DIG/dt=0.
2A/ s Over any 20 ms period t=20ms t=16.
7ms T2+G+ T2+GT2-GT2-G+ MIN - - - -40 - Value 800 8 65 71 21 UNIT V A A A A2S 50 A/ s 50 A/ s 50 A/ s 10 A/ s 2 A 5 V 5 W 0.
5 W 150 125 TJ=25OC unless otherwise stated SYMBOL PARAMETER CONDITIONS Static characteristics IGT1 Gate trigger current VD=12V; IT=0.
1A IL Latching cur...


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