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BTA06-600C

First Silicon
Part Number BTA06-600C
Manufacturer First Silicon
Description Bi-Directional Triode Thyristor
Published Sep 15, 2020
Detailed Description SEMICONDUCTOR TECHNICAL DATA Bi-Directional Triode Thyristor Designed for high performance full-wave ac control applicat...
Datasheet PDF File BTA06-600C PDF File

BTA06-600C
BTA06-600C

Overview
SEMICONDUCTOR TECHNICAL DATA Bi-Directional Triode Thyristor Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
BTA06-600C TO-220AB Features • Blocking Voltage to 600 V • On-State Current Rating of 6A RMS at 100℃ • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt-1500V/us minimum at 125℃ • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating dI/dt- 4.
0A/ms minimum at 125℃ • Internally Isolated (2500VRMS) • These are Pb-Free Devices 1 23 Symbol ○ 2.
T2 ▼▲ ○ 3.
Gate 1.
T1 ○ Absolute Maximum Ratings Symbol IT(RMS) ITSM I2t DI/DT IGM PG(AV) Tstg Tj Parameter TO-220AB RMS on-state current(full since wave) TO-220AB lns.
Non repetitive surge peak on-state F=50Hz current(full cycle, Tj initial=25℃) F=60Hz I2t Value for fusing tp=10ms Critical rate of rise of on-state current IG=2XIGT,tr≤100ns F=120Hz Peak gate current tp=20us Av...


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