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T835-600H

INCHANGE
Part Number T835-600H
Manufacturer INCHANGE
Description Thyristor
Published Sep 16, 2020
Detailed Description isc Thyristors INCHANGE Semiconductor T835-600H APPLICATIONS ·With TO-251(IPAK) package. ·Be suitable for general purp...
Datasheet PDF File T835-600H PDF File

T835-600H
T835-600H

Overview
isc Thyristors INCHANGE Semiconductor T835-600H APPLICATIONS ·With TO-251(IPAK) package.
·Be suitable for general purpose AC switching,they can be used as an ON/OFF function in applications.
·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RMS) ITSM PG(AV) Repetitive peak reverse voltage RMS on-state current @Tc=110℃ Surge non-repetitive on-state current F=50HZ；t=20ms F=60HZ;16.
7ms Average gate power dissipation @Tj=125℃ tP=20μs Tj Operating junction temperature Tstg Storage temperature MIN 600 600 8 80 84 1 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 11A；tp=380μs Gate-trigger current （ minimum IGT ...


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