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2SA671

INCHANGE
Part Number 2SA671
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 16, 2020
Detailed Description isc Silicon PNP Power Transistor 2SA671 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(SUS)= -1.0V(Max)@ IC= -2....
Datasheet PDF File 2SA671 PDF File

2SA671
2SA671

Overview
isc Silicon PNP Power Transistor 2SA671 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(SUS)= -1.
0V(Max)@ IC= -2.
0A ·DC Current Gain : hFE= 35-320@ IC= -0.
5A ·Complement to Type 2SC1061 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.
0 UNIT ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA671 ELECTRIC...


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