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2SA1220

Part Number	2SA1220
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 16, 2020
Detailed Description	isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Volta...
Datasheet	2SA1220 PDF File

Overview

isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A ·Complement to Type 2SC2690/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SA1220 -120 VCBO Collector-Base Voltage V 2SA1220A -160 2SA1220 -120 VCEO Collector-Emitter Voltage V 2SA1220A -160 VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -5 V -1.
2 A -2.
5 A -0.
3 A 1.
2 W 20 150 ℃ -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors 2SA1220/A ELEC...

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