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2SA1358-Z

INCHANGE
Part Number 2SA1358-Z
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 16, 2020
Detailed Description isc Silicon PNP Power Transistor 2SA1358-Z DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low c...
Datasheet PDF File 2SA1358-Z PDF File

2SA1358-Z
2SA1358-Z


Overview
isc Silicon PNP Power Transistor 2SA1358-Z DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -0.
1 A 10 W 1.
5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1358-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emit...



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