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2SA1386A

Part Number	2SA1386A
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 16, 2020
Detailed Description	isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1386 = -180...
Datasheet	2SA1386A PDF File

Overview

isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A ·Good Linearity of hFE ·Complement to Type 2SC3519/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SA1386 -160 VCBO Collector-Base Voltage V 2SA1386A -180 2SA1386 -160 VCEO Collector-Emitter Voltage V 2SA1386A -180 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1386/A isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Co...

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