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2SA1383

Part Number	2SA1383
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 1, 2011
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·TO-220 package ·High Collector-Emitter Breakdown Voltage ·Good Linearity ...
Datasheet	2SA1383 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·TO-220 package ·High Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.
1 A Total Power Dissipation @TC=25℃ 10 PT W Total Power Dissipation @Ta=25℃ 1.
5 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SA1383 isc website： www.
iscsemi.
com 1 isc & iscsemi is reg...

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