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2SB541

Part Number	2SB541
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistors 2SB541 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Hig...
Datasheet	2SB541 PDF File

Overview

isc Silicon PNP Power Transistors 2SB541 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High Power Dissipation- : PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD388 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
·Suitable for output stage of 40~50 watts audio amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A ICM Collector Current-Pulse PC Collector Power Dissipation @TC=2...

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