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2SB546

Part Number	2SB546
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V (Min) ·Collector P...
Datasheet	2SB546 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V (Min) ·Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃ ·Complement to Type 2SD401 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in line-operated color TV vertical deflection of complementary symmetry circuit.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.
0 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IBM Base Current-Peak PC Total Power Dissipation @ ...

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