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2SB554

Part Number	2SB554
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High Power Dissipation- : PC= 150W@TC= 25℃ ·High Collector-Emitter Breakd...
Datasheet	2SB554 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High Power Dissipation- : PC= 150W@TC= 25℃ ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SD424 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier ,DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous 1.
5 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tst...

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