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2SB919

Part Number	2SB919
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current: IC= -8A ·Low Collector Saturation Voltage : VCE(s...
Datasheet	2SB919 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current: IC= -8A ·Low Collector Saturation Voltage : VCE(sat)= -0.
5V(Max)@IC= -3A ·Complement to Type 2SD1235 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for large current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature -15 A 30 W 1.
75 150 ℃ Tstg S...

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