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2SB1555

Part Number	2SB1555
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·H...
Datasheet	2SB1555 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
1 A 100 W 150 ℃ Tstg Storage Temper...

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