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2SC3507

Part Number	2SC3507
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switc...
Datasheet	2SC3507 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and high voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 A ...

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