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2SD844

Part Number	2SD844
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector...
Datasheet	2SD844 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
4V (Max)@IC= 4A ·High Collector Power Dissipation : PC= 60W @TC=25℃ ·Complement to Type 2SB754 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IE Emitter Current-Continuous Collector Power Dissipation...

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