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MJW16010A

Part Number	MJW16010A
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon NPN Power Transistor MJW16010A DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Sustaining...
Datasheet	MJW16010A PDF File

Overview

isc Silicon NPN Power Transistor MJW16010A DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical.
They are particularly suited for line-operated switchmode applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-EmitterVoltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Cu...

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