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2SB1381

Part Number	2SB1381
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor 2SB1381 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100...
Datasheet	2SB1381 PDF File

Overview

isc Silicon PNP Darlington Power Transistor 2SB1381 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -2.
5A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.
5V(Max)@ (IC= -2.
5A, IB= -5mA) ·Complement to Type 2SD2079 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 ...

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