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2SB1383

Part Number	2SB1383
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= -12A, VCE= -4V ·Hi...
Datasheet	2SB1383 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.
)@ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver of solenoid, motor and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -25 A ICM Collector Current-Peak -40 A IB Base Current- Continuous PC Collector Power Dissipat...

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