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2SB1411

INCHANGE
Part Number 2SB1411
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 18, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Hi...
Datasheet PDF File 2SB1411 PDF File

2SB1411
2SB1411


Overview
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -1A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.
5V(Max)@ (IC= -1A, IB= -2mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation 2SB1411 APPLICATIONS ·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.
5 A 2 W 20 150 ℃ Tstg Storage Temperature isc website：www.
iscsemi.
cn -55~150 ℃ 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -2mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -8mA VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -2mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -3V hFE-2 DC Current Gain IC= -2A; VCE= -3V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= -1A, IB1= -IB2= -2mA, VCC≈ -30V; RL= 30Ω 2SB1411 MIN TYP.
MAX UNIT -100 V -1.
5 V -2.
5 V -2.
2 V -100 μA -2.
5 mA 1500 15000 1000 1.
0 μs 3.
0 μs 2.
0 μs isc website：www.
iscsemi.
cn 2 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1411 Notice： ISC reserves the rights to make changes of the content herein the datasheet ...


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