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2SB1430

INCHANGE
Part Number 2SB1430
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 18, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Hi...
Datasheet PDF File 2SB1430 PDF File

2SB1430
2SB1430

Overview
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.
5V(Max)@ (IC= -2A, IB= -2mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and lowspeed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB ...


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