DatasheetsPDF.com

2SB1431

INCHANGE
Part Number 2SB1431
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 18, 2020
Detailed Description isc Silic\on PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·H...
Datasheet PDF File 2SB1431 PDF File

2SB1431
2SB1431

Overview
isc Silic\on PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -3A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.
5V(Max)@ (IC= -3A, IB= -3mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplifiers and low- speed switching applications.
2SB1431 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)