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2SB1470

Part Number	2SB1470
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High forward current transfer ratio hFE ·Low collector to emit...
Datasheet	2SB1470 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High forward current transfer ratio hFE ·Low collector to emitter saturation voltage VCE(sat) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification ·Optimum for 120W HiFi output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -15 A 150 W 3.
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