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2SB1477

Part Number	2SB1477
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Wide Area o...
Datasheet	2SB1477 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.
) ·Wide Area of Safe Operation ·Complement to Type 2SD2236 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1477 isc website：www.
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