DatasheetsPDF.com

2SB1556

Part Number	2SB1556
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·H...
Datasheet	2SB1556 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Complement to Type 2SD2385 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
1 A 120 W 150 ℃ Tstg Storage Temper...

Similar Datasheet

2SB1502 Silicon PNP Transistor - Panasonic Semiconductor
2SB1502 Silicon PNP Darlington Power Transistor - New Jersey Semi-Conductor
2SB1502 PNP Transistor - INCHANGE
2SB1503 Silicon PNP Transistor - Panasonic Semiconductor
2SB1503 SILICON POWER TRANSISTOR - SavantIC
2SB1503 Silicon PNP Darlington Power Transistor - New Jersey Semi-Conductor
2SB1503 PNP Transistor - INCHANGE
2SB1504 Silicon PNP epitaxial planar type darlington - Panasonic
2SB1507 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SB1507 SILICON POWER TRANSISTOR - SavantIC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)