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2SB1568

Part Number	2SB1568
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 18, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Hi...
Datasheet	2SB1568 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD2399 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -6 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1568 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1568 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX U...

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