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2SC2516

INCHANGE
Part Number 2SC2516
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 18, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robus...
Datasheet PDF File 2SC2516 PDF File

2SC2516
2SC2516

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 12 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 2.
5 A 1.
5 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2516 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V...


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