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2SC2981

Part Number	2SC2981
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 19, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Collector-E...
Datasheet	2SC2981 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
0V(Max)@ IC= 2A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage, high-speed and high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ J...

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