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2SC3060

Part Number	2SC3060
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 19, 2020
Detailed Description	isc Silicon NPN Power Transistor 2SC3060 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 850V(Min) ...
Datasheet	2SC3060 PDF File

Overview

isc Silicon NPN Power Transistor 2SC3060 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 850V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic generators ·Class C and D amplifiers ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 850 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25...

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