DatasheetsPDF.com

2SC3456

Part Number	2SC3456
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 20, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wid...
Datasheet	2SC3456 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1.
5 A ICM Collector Current-Peak 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
8 A 40 W 150 ℃ Tstg Storage Temperature Range ...

Similar Datasheet

2SC3400 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo
2SC3401 PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS - Sanyo
2SC3402 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SC3402 NPN Transistor - ETC
2SC3403 Silicon PNP Triple-Diffused Planar Type Transistor - ETC
2SC3404 NPN EPITAXIAL PLANAR TYPE TRANSISTOR - Mitsubishi Electric Semiconductor
2SC3405 Silicon NPN Triple Diffused Type TRANSISTOR - Toshiba Semiconductor
2SC3405 NPN Silicon Triple Diffused Transistor - Kexin
2SC3409 SILICON POWER TRANSISTOR - SavantIC
2SC3409 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)