isc
Silicon NPN
Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A
·Good Linearity of hFE ·Complement to Type 2SA1386/A ·Minimum Lot-to-Lot variations for robust device
performance an...