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2SC3512

Part Number	2SC3512
Manufacturer	Inchange Semiconductor
Description	Silicon NPN RF Transistor
Published	Oct 29, 2013
Detailed Description	isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3512 DESCRIPTION ·Low Noise and High Gain NF = 1.6 dB TYP. @f ...
Datasheet	2SC3512 PDF File

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3512 DESCRIPTION ·Low Noise and High Gain NF = 1.
6 dB TYP.
@f = 900 MHz PG = 10.
5 dB TYP.
@f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.
6 W 150 ℃ Tstg Storage Temperature Range -55~1...

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