DatasheetsPDF.com

2SC3927

Part Number	2SC3927
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 20, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 550V(Min) ·High Swi...
Datasheet	2SC3927 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 550V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3927 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3927 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC...

Similar Datasheet

2SC3900 Epitaxial Planar Silicon Transistor - Sanyo
2SC3901 PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS - Sanyo
2SC3901 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SC3902 PNP/NPN Transistors - Sanyo Semicon Device
2SC3902 SILICON POWER TRANSISTOR - SavantIC
2SC3902 Bipolar Transistor - ON Semiconductor
2SC3902 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
2SC3902 NPN Transistor - INCHANGE
2SC3904 Silicon NPN Transistor - Panasonic Semiconductor
2SC3906K High-voltage Amplifier Transistor - Rohm

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)